WeEn Semiconductors
BUJD103AD,118
Bipolar Transistors - BJT TRANS NPN 700V 4A
Basic Information
View Datasheet ↗- Manufacturer
- WeEn Semiconductors
- Product Category
- Bipolar Transistors - BJT
- Package
- DPAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 400 V
- Collector- Base Voltage VCBO
- 700 V
- Collector-Emitter Saturation Voltage
- 0.29 V
- Maximum DC Collector Current
- 4 A
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 32
- Height
- 2.38 mm
- Length
- 6.73 mm
- Width
- 6.22 mm
Show more parameters (4)
- DC Collector/Base Gain hfe Min
- 10
- Pd - Power Dissipation
- 80 W
- Part # Aliases
- 934055993118
- Unit Weight
- 0.009185 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.