Central Semiconductor
MPS651 TRE TIN/LEAD
Bipolar Transistors - BJT 80Vcbo 60Vceo 5.0Vebo 2.0A 625mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MPS651
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Reel
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Pd - Power Dissipation
- 1.5 W
- Gain Bandwidth Product fT
- 75 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 2 A
Show more parameters (1)
- DC Collector/Base Gain hfe Min
- 40 at 2 V, 2 A
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.