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ROHM Semiconductor

IMD6AT108

Bipolar Transistors - Pre-Biased PNP/NPN 50V 100MA SOT-457

Basic Information

View Datasheet ↗
Manufacturer
ROHM Semiconductor
Product Category
Bipolar Transistors - Pre-Biased
Series
IMD6A
Package
SC-74-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

18 parameters
Configuration
Dual
Transistor Polarity
NPN, PNP
Typical Input Resistor
4.7 kOhms
DC Collector/Base Gain hfe Min
100
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
300 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
600
Emitter- Base Voltage VEBO
5 V
Show more parameters (6)
Height
1.1 mm
Length
2.9 mm
Width
1.6 mm
Number of Channels
2 Channel
Part # Aliases
IMD6A
Unit Weight
0.001235 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IMD6AT108 Specifications and Datasheet | ChipSourceHub