ROHM Semiconductor
R8002CND3FRATL
MOSFETs TO252 800V 2A N-CH
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFETs
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
23 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 2 A
- Rds On - Drain-Source Resistance
- 4.3 Ohms
- Vgs - Gate-Source Voltage
- - 30 V, 30 V
- Vgs th - Gate-Source Threshold Voltage
- 5.5 V
- Qg - Gate Charge
- 12.1 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 69 W
Show more parameters (11)
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Configuration
- Single
- Country of Origin
- TH
- Fall Time
- 67 ns
- Rise Time
- 22 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 35 ns
- Typical Turn-On Delay Time
- 19 ns
- Part # Aliases
- R8002CND3FRA
- Unit Weight
- 0.011640 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.