STMicroelectronics
BUL1102EFP
Bipolar Transistors - BJT High voltage fast switching NPN power transistor
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- BUL1102E
- Package
- TO-220FP-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 450 V
- Emitter- Base Voltage VEBO
- 12 V
- Maximum DC Collector Current
- 4 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 16.4 mm
- Length
- 10.4 mm
- Width
- 4.6 mm
- Continuous Collector Current
- 4 A
- DC Collector/Base Gain hfe Min
- 35 at 250 mA, 5 V, 12 at 2 A, 5 V
Show more parameters (2)
- Pd - Power Dissipation
- 30 W
- Unit Weight
- 0.090478 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.