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onsemi

NSV20201LT1G

Bipolar Transistors - BJT 20V NPN LOW VCE(SAT) XTR

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
NSS20201L
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

17 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Maximum DC Collector Current
2 A
Collector- Emitter Voltage VCEO Max
20 V
Collector- Base Voltage VCBO
20 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
72 mV
Pd - Power Dissipation
460 mW
Gain Bandwidth Product fT
150 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (5)
Qualification
AEC-Q101
Continuous Collector Current
2 A
Country of Origin
CN
DC Collector/Base Gain hfe Min
200 at 500 mA, 2 V
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NSV20201LT1G Specifications and Datasheet | ChipSourceHub