Nexperia
PHPT61002NYCX
Bipolar Transistors - BJT NPN High Power BipolarTransistor
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- LFPAK56-5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 50 mV
- Maximum DC Collector Current
- 2 A
- Gain Bandwidth Product fT
- 140 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- DC Current Gain hFE Max
- 250
- Continuous Collector Current
- 2 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 150
- Pd - Power Dissipation
- 25 W
- Unit Weight
- 0.002342 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.