onsemi
FJB5555TM
Bipolar Transistors - BJT NPN Silicon Transistor
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- FJB5555
- Package
- D2PAK-3
- Mounting Style
- Through Hole
- Packaging
- MouseReel
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 5 A
- Collector- Emitter Voltage VCEO Max
- 400 V
- Collector- Base Voltage VCBO
- 1.05 kV
- Emitter- Base Voltage VEBO
- 14 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Pd - Power Dissipation
- 1.6 W
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- CN
- Unit Weight
- 0.046296 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.