ON Semiconductor
SBC807-25WT1G
Bipolar Transistors - BJT SS GP XSTR PNP 45V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BC807-25W
- Package
- SC-70-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 45 V
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 700 mV
- Maximum DC Collector Current
- - 500 mA
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 400 at - 100 mA, - 1 V
- DC Collector/Base Gain hfe Min
- 160 at - 100 mA, - 1 V
Show more parameters (3)
- Pd - Power Dissipation
- 460 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.000212 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.