STMicroelectronics
STGWA25M120DF3
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- IGBT Transistors
- Series
- STGWA25M120DF3
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 1.85 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 50 A
- Pd - Power Dissipation
- 375 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Continuous Collector Current Ic Max
- 25 A
- Gate-Emitter Leakage Current
- 250 nA
- Unit Weight
- 1.340411 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.