ChipSourceHub

ON Semiconductor

NSVMUN531335DW1T1G

Bipolar Transistors - Pre-Biased SS SC88 BR XSTR NPN/PNP 5

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - Pre-Biased
Package
SOT-363-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

13 parameters
Configuration
Dual
Transistor Polarity
NPN, PNP
Typical Input Resistor
47 kOhms
Typical Resistor Ratio
1, 0.047
DC Collector/Base Gain hfe Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
385 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Channel Mode
Enhancement
Qualification
AEC-Q101
Show more parameters (1)
Unit Weight
0.000265 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NSVMUN531335DW1T1G Specifications and Datasheet | ChipSourceHub