Central Semiconductor
2N3497
Bipolar Transistors - BJT PNP Ampl/Switch
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3497
- Package
- TO-18
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 120 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 0.35 V
- Gain Bandwidth Product fT
- 150 MHz
- Height
- 5.33 mm
- Length
- 5.84 mm
- Width
- 5.84 mm
- Continuous Collector Current
- 0.45 A
- DC Collector/Base Gain hfe Min
- 40
Show more parameters (2)
- Part # Aliases
- 2N3497 PBFREE
- Unit Weight
- 0.011020 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.