onsemi
NZT660
Bipolar Transistors - BJT PNP Transistor Low Saturation
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- NZT660
- Package
- SOT-223-4
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 3 A
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 550 mV
- Pd - Power Dissipation
- 2 W
- Gain Bandwidth Product fT
- 75 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (7)
- Continuous Collector Current
- 3 A
- Country of Assembly
- PH
- Country of Diffusion
- JP
- Country of Origin
- PH
- DC Current Gain hFE Max
- 300
- Part # Aliases
- NZT660_NL
- Unit Weight
- 0.003951 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.