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Comchip Technology

MMBT2907A-G

RF Bipolar Transistors VCEO=60V IC=600mA

Basic Information

View Datasheet ↗
Manufacturer
Comchip Technology
Product Category
RF Bipolar Transistors
Series
MMBT2907A
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

13 parameters
Transistor Type
Bipolar Power
Technology
Si
Transistor Polarity
PNP
DC Collector/Base Gain hfe Min
50
Collector- Emitter Voltage VCEO Max
- 60 V
Emitter- Base Voltage VEBO
- 5 V
Continuous Collector Current
- 600 mA
Maximum Operating Temperature
+ 150 C
Configuration
Single
Operating Frequency
200 MHz
Type
RF Bipolar Power
Pd - Power Dissipation
250 mW
Show more parameters (1)
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MMBT2907A-G Specifications and Datasheet | ChipSourceHub