Central Semiconductor
TIP112
Bipolar Transistors - BJT 100Vcbo 100Vceo 5.0Vebo 2.0A 50W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- TIP112
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 2.5 V
- Maximum DC Collector Current
- 4 A
- Gain Bandwidth Product fT
- 25 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 2 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 500 at 2 A, 4 V
- Pd - Power Dissipation
- 50 W
- Part # Aliases
- PBFREE TIP112
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.