Central Semiconductor
2N5298
Bipolar Transistors - BJT NPN Gen Purp Power
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5298
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 80 V
- Collector-Emitter Saturation Voltage
- 1 V
- Maximum DC Collector Current
- 4 A
- Gain Bandwidth Product fT
- 800 kHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Collector/Base Gain hfe Min
- 20
- Pd - Power Dissipation
- 36 W
- Part # Aliases
- 2N5298 PBFREE
- Unit Weight
- 0.081130 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.