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MACOM

CGHV37400F

GaN FETs Amplifier,400W,GaN HEMT,50V,3.5-3.7GHz

Basic Information

View Datasheet ↗
Manufacturer
MACOM
Product Category
GaN FETs
Package
440217
Mounting Style
Screw Mount
Packaging
Tray

Technical Specifications

15 parameters
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
125 V
Id - Continuous Drain Current
24 A
Rds On - Drain-Source Resistance
50 Ohms
Vgs th - Gate-Source Threshold Voltage
- 3 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 125 C
Country of Origin
US
Gain
14 dB
Maximum Operating Frequency
3.7 GHz
Minimum Operating Frequency
3.3 GHz
Output Power
525 W
Show more parameters (3)
Technology
GaN
Transistor Type
GaN HEMT
Vgs - Gate-Source Breakdown Voltage
- 10 V, 2 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CGHV37400F Specifications and Datasheet | ChipSourceHub