Wolfspeed / Cree
CGHV1J070D-GP4
RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt
Basic Information
View Datasheet ↗- Manufacturer
- Cree, Inc.
- Brand
- Wolfspeed / Cree
- Product Category
- RF JFET Transistors
- Package
- Die
- Mounting Style
- SMD/SMT
- Packaging
- Gel Pack
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 17 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Vgs - Gate-Source Breakdown Voltage
- - 10 V to 2 V
- Id - Continuous Drain Current
- 6 A
- Output Power
- 70 W
- Maximum Operating Temperature
- + 225 C
- Configuration
- Single
- Operating Frequency
- 10 MHz to 18 GHz
- Number of Channels
- 1 Channel
Show more parameters (2)
- Rds On - Drain-Source Resistance
- 200 mOhms
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.