ON Semiconductor
2SB1201S-E
Bipolar Transistors - BJT BIP PNP 2A 50V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SB1201
- Package
- TO-251-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 150 mV, - 300 mV
- Maximum DC Collector Current
- 4 A, - 4 A
- Gain Bandwidth Product fT
- 150 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 2 A
- Pd - Power Dissipation
- 800 mW
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.