STMicroelectronics
BU508AF
Bipolar Transistors - BJT NPN Power Transistor
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- BU508AF
- Package
- ISOWATT-218FX-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 700 V
- Collector- Base Voltage VCBO
- 9 V
- Emitter- Base Voltage VEBO
- 9 V
- Maximum DC Collector Current
- 8 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 14.7 mm
- Length
- 26.7 mm
- Width
- 15.7 mm
- Continuous Collector Current
- 8 A
Show more parameters (1)
- Pd - Power Dissipation
- 50000 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.