Microchip Technology
APT50GP60JDQ2
IGBT Modules IGBT PT MOS 7 Combi 600 V 50 A SOT-227
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- IGBT Modules
- Package
- ISOTOP-4
- Mounting Style
- SMD/SMT
- Packaging
- Tube
Technical Specifications
12 parameters- Product
- IGBT Modules
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 2.2 V
- Continuous Collector Current at 25 C
- 100 A
- Gate-Emitter Leakage Current
- 100 nA
- Pd - Power Dissipation
- 329 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- PH
- Maximum Gate Emitter Voltage
- 30 V
- Technology
- Si
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.