Central Semiconductor
CEN-U07
Bipolar Transistors - BJT NPN Pwr Trans
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- CEN-U07
- Package
- TO-202
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Maximum DC Collector Current
- 2 A
- Gain Bandwidth Product fT
- 50 MHz
- Maximum Operating Temperature
- + 150 C
- DC Collector/Base Gain hfe Min
- 20 at 500 mA, 1 V
- Pd - Power Dissipation
- 10 W
- Part # Aliases
- CEN-U07 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.