Diodes Incorporated
DMG302PU-13
MOSFET 25V P-Ch Enh Mode FET -8Vgss 0.33W
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- DMG302
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- 25 V
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 25 V
- Id - Continuous Drain Current
- 17 A
- Rds On - Drain-Source Resistance
- 13 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 960 mV
- Vgs - Gate-Source Voltage
- 8 V
- Qg - Gate Charge
- 350 pC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 450 mW
Show more parameters (8)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 P-Channel
- Fall Time
- 11 ns
- Rise Time
- 2.3 ns
- Typical Turn-Off Delay Time
- 24.1 ns
- Typical Turn-On Delay Time
- 4.5 ns
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.