Diodes Incorporated
ZXTD6717E6QTA
Bipolar Transistors - BJT SS Low Sat Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-26-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 12 V to 15 V
- Collector- Base Voltage VCBO
- 15 V, 12 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 16.5 mV
- Maximum DC Collector Current
- 5 A, 3 A
- Gain Bandwidth Product fT
- 180 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450
Show more parameters (3)
- Continuous Collector Current
- 1.5 A, 1.25 A
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 1.7 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.