Central Semiconductor
2N3505
Bipolar Transistors - BJT PNP Gen Pur SS
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3505
- Package
- TO-18
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- T
Technical Specifications
13 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 400 mV
- Maximum DC Collector Current
- 150 mA
- Gain Bandwidth Product fT
- 200 MHz
- DC Current Gain hFE Max
- 300
- Height
- 5.33 mm
- Length
- 5.84 mm
- Width
- 5.84 mm
Show more parameters (1)
- Part # Aliases
- 2N3505 TIN/LEAD
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.