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onsemi

NSV1C201LT1G

Bipolar Transistors - BJT NPN 100V SOT23 LOW V-SAT

Basic Information

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Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
NSS1C201L
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

18 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Maximum DC Collector Current
2 A
Collector- Emitter Voltage VCEO Max
100 V
Collector- Base Voltage VCBO
140 V
Emitter- Base Voltage VEBO
7 V
Collector-Emitter Saturation Voltage
30 mV
Pd - Power Dissipation
490 mW
Gain Bandwidth Product fT
110 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (6)
Qualification
AEC-Q101
Continuous Collector Current
2 A
Country of Origin
MY
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
360 at 500 mA, 2 V
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NSV1C201LT1G Specifications and Datasheet | ChipSourceHub