Central Semiconductor
2N4410
Bipolar Transistors - BJT 120Vcbo 80Vceo 5.0Vebo 250mA 625mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N4410
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Maximum DC Collector Current
- 10 mA
- Gain Bandwidth Product fT
- 60 MHz
- Height
- 5.33 mm
- Length
- 5.21 mm
- Width
- 4.19 mm
- Continuous Collector Current
- 0.45 A
Show more parameters (4)
- DC Collector/Base Gain hfe Min
- 60 at 10 mA, 1 V
- Pd - Power Dissipation
- 625 mW
- Part # Aliases
- 2N4410 PBFREE
- Unit Weight
- 0.015873 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.