Diodes Incorporated
ZVN4206AVSTZ
MOSFET Avalanche
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- ZVN4206
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 600 mA
- Rds On - Drain-Source Resistance
- 1.5 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 20 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 700 mW
- Configuration
- Single
Show more parameters (13)
- Channel Mode
- Enhancement
- Height
- 4.01 mm
- Length
- 4.77 mm
- Product
- MOSFET Small Signal
- Transistor Type
- 1 N-Channel
- Type
- FET
- Width
- 2.41 mm
- Forward Transconductance - Min
- 300 mS
- Fall Time
- 12 ns
- Rise Time
- 12 ns
- Typical Turn-Off Delay Time
- 12 ns
- Typical Turn-On Delay Time
- 8 ns
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.