STMicroelectronics
STGYA75H120DF2
IGBTs Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT in a Max247 long l
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- IGBTs
- Package
- MAX257-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
13 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 2.1 V
- Maximum Gate Emitter Voltage
- - 20 V, 20 V
- Continuous Collector Current at 25 C
- 150 A
- Pd - Power Dissipation
- 750 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Continuous Collector Current Ic Max
- 75 A
- Country of Origin
- CN
- Gate-Emitter Leakage Current
- 250 nA
Show more parameters (1)
- Unit Weight
- 0.156264 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.