Vishay Semiconductors
VS-GB90SA120U
IGBT Modules Output & SW Modules - SOT-227 IGBT
Basic Information
- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- IGBT Modules
- Package
- SOT-227-4
- Mounting Style
- SMD/SMT
- Packaging
- Tube
Technical Specifications
10 parameters- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 3.3 V
- Continuous Collector Current at 25 C
- 149 A
- Gate-Emitter Leakage Current
- 250 nA
- Pd - Power Dissipation
- 862 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Maximum Gate Emitter Voltage
- 20 V
- Unit Weight
- 1.058219 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.