ON Semiconductor
NSM4002MR6T1G
Bipolar Transistors - BJT DUAL NPN TRANSISTORS
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SC-74-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 40 V, 45 V
- Collector- Base Voltage VCBO
- 60 V, 50 V
- Emitter- Base Voltage VEBO
- 6 V, 5 V
- Collector-Emitter Saturation Voltage
- 300 mV, 700 mV
- Maximum DC Collector Current
- 200 mA, 500 mA
- Gain Bandwidth Product fT
- 300 MHz, 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300, 600
- Continuous Collector Current
- 200 mA, 500 mA
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 30 at 100 mA, 1 V, 40 at 500 mA, 1 V
- Pd - Power Dissipation
- 500 uW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.