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MACOM

CGHV27015S

GaN FETs GaN HEMT DC-6.0GHz, 15 Watt

Basic Information

View Datasheet ↗
Manufacturer
MACOM
Product Category
GaN FETs
Package
DFN-12
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

18 parameters
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
150 V
Id - Continuous Drain Current
1.78 A
Vgs th - Gate-Source Threshold Voltage
- 3 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
5 W
Configuration
Single
Country of Origin
US
Gain
21.2 dB
Maximum Drain Gate Voltage
50 V
Maximum Operating Frequency
2.7 GHz
Show more parameters (6)
Minimum Operating Frequency
0 Hz
Moisture Sensitive
Yes
Output Power
15 W
Technology
GaN
Transistor Type
GaN HEMT
Vgs - Gate-Source Breakdown Voltage
- 10 V, 2 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CGHV27015S Specifications and Datasheet | ChipSourceHub