ON Semiconductor
NJW21193G
Bipolar Transistors - BJT 200W PNP
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NJW21194
- Package
- TO-3P-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 250 V
- Collector- Base Voltage VCBO
- 400 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.4 V
- Maximum DC Collector Current
- 16 A
- Gain Bandwidth Product fT
- 4 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 80
- Height
- 18.7 mm
Show more parameters (5)
- Length
- 15.6 mm
- Width
- 4.8 mm
- DC Collector/Base Gain hfe Min
- 20
- Pd - Power Dissipation
- 200 W
- Unit Weight
- 0.238311 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.