Infineon Technologies
BFN18H6327XTSA1
Bipolar Transistors - BJT AF TRANSISTORS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-89-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 300 V
- Collector- Base Voltage VCBO
- 300 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Maximum DC Collector Current
- 500 mA
- Gain Bandwidth Product fT
- 70 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 200 mA
- Part # Aliases
- 18 BFN H6327 SP001125290
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.