Central Semiconductor
2N4953 TIN/LEAD
Bipolar Transistors - BJT NPN 60Vcbo 40Vcbo 30Vceo 5.0Vebo 1A
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N4953
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 625 mW
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 1 A
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 75 at 10 V, 1 mA
- DC Current Gain hFE Max
- 600 at 10 V, 150 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.