Central Semiconductor
2N6517 TIN/LEAD
Bipolar Transistors - BJT 350Vcbo 350Vceo 6.0Vebo 5.0V 625mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N6517
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 350 V
- Collector- Base Voltage VCBO
- 350 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 625 mW
- Gain Bandwidth Product fT
- 200 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 500 mA
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 20 at 1 mA, 10 V
- DC Current Gain hFE Max
- 200 at 30 mA, 10 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.