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Renesas Electronics

UPA3753GR-E1-AX

MOSFETs POWER TRANSISTOR MOSFET

Basic Information

View Datasheet ↗
Manufacturer
Renesas Electronics
Product Category
MOSFETs
Package
SOP-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

19 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
2 Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
5 A
Rds On - Drain-Source Resistance
56 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Qg - Gate Charge
13.4 nC
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
850 mW
Channel Mode
Enhancement
Show more parameters (7)
Country of Origin
MY
Fall Time
5.1 ns
Forward Transconductance - Min
2.5 S
Rise Time
3.7 ns
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
30 ns
Typical Turn-On Delay Time
8.5 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

UPA3753GR-E1-AX Specifications and Datasheet | ChipSourceHub