STMicroelectronics
PD55008S-E
RF MOSFET Transistors POWER R.F.
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- RF MOSFET Transistors
- Series
- PD55008-E
- Package
- PowerSO-10
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 4 A
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Gain
- 17 dB
- Output Power
- 8 W
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Height
- 3.5 mm
- Length
- 7.5 mm
- Operating Frequency
- 1 GHz
Show more parameters (7)
- Type
- RF Power MOSFET
- Width
- 9.4 mm
- Channel Mode
- Enhancement
- Moisture Sensitive
- Yes
- Pd - Power Dissipation
- 52.8 W
- Vgs - Gate-Source Voltage
- 20 V
- Unit Weight
- 0.041976 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.