ROHM Semiconductor
DTDG14GPT100
Bipolar Transistors - Pre-Biased DIGITAL NPN 60V 1A
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- DTDG14GP
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 300
- Collector- Emitter Voltage VCEO Max
- 60 V
- Continuous Collector Current
- 1 A
- Peak DC Collector Current
- 1000 mA
- Pd - Power Dissipation
- 500 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300
- Emitter- Base Voltage VEBO
- 5 V
- Height
- 1.5 mm
Show more parameters (4)
- Length
- 4.5 mm
- Width
- 2.5 mm
- Part # Aliases
- DTDG14GP
- Unit Weight
- 0.004603 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.