Central Semiconductor
CMST5086 TR PBFREE
Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 275mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 50 mA
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 3 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 275 mW
- Gain Bandwidth Product fT
- 40 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (4)
- Continuous Collector Current
- 50 mA
- DC Collector/Base Gain hfe Min
- 150
- DC Current Gain hFE Max
- 500
- Unit Weight
- 0.000176 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.