Central Semiconductor
2N6261 TIN/LEAD
Bipolar Transistors - BJT NPN 4.0A 90Vcbo 80Vceo 0.5Vce
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N6261
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
11 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 90 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Pd - Power Dissipation
- 50 W
- Gain Bandwidth Product fT
- 800 kHz
- Continuous Collector Current
- 4 A
- DC Collector/Base Gain hfe Min
- 25
- DC Current Gain hFE Max
- 100
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.