Diodes Incorporated
ZX5T849GTA
Bipolar Transistors - BJT NPN 30V
Basic Information
- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-223-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 20 A
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 7 V
- Pd - Power Dissipation
- 3 W
- Gain Bandwidth Product fT
- 140 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 7 A
Show more parameters (4)
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 20
- DC Current Gain hFE Max
- 300
- Unit Weight
- 0.003951 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.