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Nexperia

BCX53-16,135

Bipolar Transistors - BJT Trans GP BJT PNP 80V 1A 4-Pin(3+Tab)

Basic Information

View Datasheet ↗
Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Package
SOT-89-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

16 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 80 V
Collector- Base Voltage VCBO
- 100 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 500 mV
Maximum DC Collector Current
- 2 A
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
250 at - 150 mA, - 2 V
Continuous Collector Current
- 1 A
Show more parameters (4)
DC Collector/Base Gain hfe Min
63 at - 150 mA, - 2 V
Pd - Power Dissipation
500 mW
Qualification
AEC-Q101
Unit Weight
0.004586 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BCX53-16,135 Specifications and Datasheet | ChipSourceHub