Toshiba
RN1104MFV,L3F
Bipolar Transistors - Pre-Biased 150mW TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN1104MFV
- Package
- SOT-723-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- Typical Input Resistor
- 47 kOhms
- Typical Resistor Ratio
- 0.8
- DC Collector/Base Gain hfe Min
- 80
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Pd - Power Dissipation
- 150 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Emitter- Base Voltage VEBO
- 10 V
- Number of Channels
- 1 Channel
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.