Diodes Incorporated
ZXTN25012EZTA
Bipolar Transistors - BJT NPN 12V HIGH GAIN
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZXTN250
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- Packaging
- 145 mV
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 12 V
- Collector- Base Voltage VCBO
- 20 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 38 mV
- Maximum DC Collector Current
- 6.5 A
- Gain Bandwidth Product fT
- 260 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 1500 at 10 mA, 2 V
- Height
- 1.6 mm
Show more parameters (6)
- Length
- 4.6 mm
- Width
- 2.6 mm
- Continuous Collector Current
- 6.5 A
- DC Collector/Base Gain hfe Min
- 30 at 15 A, 2 V
- Pd - Power Dissipation
- 4460 mW
- Unit Weight
- 0.004603 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.