onsemi
MJD44H11-1G
Bipolar Transistors - BJT 8A 80V 20W NPN
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- MJD44H11
- Package
- IPAK-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 8 A
- Collector- Emitter Voltage VCEO Max
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1 V
- Pd - Power Dissipation
- 20 W
- Gain Bandwidth Product fT
- 85 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 8 A
Show more parameters (5)
- Country of Assembly
- CN
- Country of Diffusion
- MY
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 60
- Unit Weight
- 0.012346 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.