STMicroelectronics
BUT30V
Bipolar Transistors - BJT NPN Power Module
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- BUT30V
- Package
- ISOTOP
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 125 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 700 mV
- Maximum DC Collector Current
- 150 A
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 100 A
- DC Collector/Base Gain hfe Min
- 27
- Pd - Power Dissipation
- 250 W
- Unit Weight
- 1 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.