Vishay / Siliconix
SQJA61EP-T1_GE3
MOSFETs P-CHANNEL 60-V (D-S) 175C MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFETs
- Series
- SQA
- Package
- SO-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
20 parameters- Technology
- Si
- Transistor Polarity
- P-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 54.5 A
- Rds On - Drain-Source Resistance
- 12.1 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Qg - Gate Charge
- 48 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 68 W
Show more parameters (8)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 7 ns
- Rise Time
- 5 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 31 ns
- Typical Turn-On Delay Time
- 16 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.