STMicroelectronics
STWA75N65DM6
MOSFETs N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO-247 long lea
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFETs
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 75 A
- Rds On - Drain-Source Resistance
- 36 mOhms
- Vgs - Gate-Source Voltage
- - 25 V, 25 V
- Vgs th - Gate-Source Threshold Voltage
- 4.75 V
- Qg - Gate Charge
- 118 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 480 W
Show more parameters (3)
- Channel Mode
- Enhancement
- Country of Origin
- CN
- Unit Weight
- 0.215171 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.