ROHM Semiconductor
IMH23T110
Bipolar Transistors - Pre-Biased Dual NPN 20V 600mA
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- IMH23
- Package
- SMT-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Configuration
- Dual
- Transistor Polarity
- NPN
- Typical Input Resistor
- 4.7 kOhms
- DC Collector/Base Gain hfe Min
- 820
- Collector- Emitter Voltage VCEO Max
- 20 V
- Continuous Collector Current
- 600 mA
- Peak DC Collector Current
- 600 mA
- Pd - Power Dissipation
- 300 mW
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 820
- Emitter- Base Voltage VEBO
- 12 V
- Height
- 1.1 mm
Show more parameters (3)
- Length
- 2.9 mm
- Width
- 1.6 mm
- Part # Aliases
- IMH23
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.